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Semiconductor Wafer Bonding VIII: Science, Technology, and Applications, 2005 Proceedings Of The International Symposium

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Published by Electrochemical Society .
Written in English

Subjects:

  • Electronics - Semiconductors,
  • Engineering - Electrical & Electronic,
  • Technology & Engineering,
  • Bonding,
  • Congresses,
  • Design and construction,
  • Microelectromechanical systems,
  • Semiconductor wafers,
  • Semiconductors,
  • Science/Mathematics

Book details:

Edition Notes

ContributionsK. D. Hobart (Editor), S. Bengtsson (Editor), H. Baumgart (Editor), T. Suga (Editor), C. E. Hunt (Editor)
The Physical Object
FormatHardcover
Number of Pages462
ID Numbers
Open LibraryOL12163769M
ISBN 101566774608
ISBN 109781566774604

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A one-stop resource on all aspects of semiconductor wafer bonding for materials scientists and electrical engineers Semiconductor Wafer Bonding addresses the entire spectrum of mainstream and likely future applications of wafer bonding. It examines all of the important issues surrounding this technology, including basic interactions between flat surfaces, the influence of particles, surface. About this Item: John Wiley & Sons Inc, United States, Hardback. Condition: New. 1. Auflage. Language: English. Brand new Book. A one-stop resource on all aspects of semiconductor wafer bonding for materials scientists and electrical engineers Semiconductor Wafer Bonding addresses the entire spectrum of mainstream and likely future applications of wafer bonding. Wafer Bonding: Applications and Technology Book. his two seminal books on Semiconductor Wafer Bonding Science and in the nm waveband () IEEE Photonics Technology .   Semiconductor Wafer Bonding: Science, Technology and Applications. The Electrochemical Society Proceedings Series. Edited book, Editor. Karl Hobart. Charles Hunt. Helmut Baumgart. Tadatomo Suga. Stefan Bengtsson. Chalmers, Microtechnology and Nanoscience (MC2) Chalmers University of Technology. SE 96 GOTHENBURG, SWEDEN.

Advancing solid state & electrochemical science & technology. The Electrochemical Society is the world's leading organization for research in electrochemical and solid state science and technology, with over 8, members from all across the globe. ECS's mission is to advance the theory, practice, and dissemination of knowledge in these fields. PV - ISBN - Semiconductor Wafer Bonding VIII: Science, Technology, and Applications, K. D. Hobart, C. E. Hunt, H. Baumgart, T. Suga, and S. Bengtsson, $ member price, $ nonmember price--Wafer bonding can be used to create novel composite materials and devices that would otherwise be unattainable. This book covers. Direct wafer bonding is one of today's leading technologies for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs for future low power CMOS application. A lot of these drawbacks can be avoided by bonding small III–V dies instead of full wafers. Indeed, III–V dies (minimum size 1 mm 2) can be diced and bonded individually at specific positions on the Si wafer (see Figure ).This approach does not suffer from the wafer-size mismatch and thus results in a smarter use of both III–V and Si material.

  Semiconductor Wafer Bonding VIII: Science, Technology, and Applications, Proceedings Of The International Symposium [Hobart, K. D., Bengtsson, S., Baumgart, H. Anna Rudawska, in Surface Treatment in Bonding Technology, Surface treatment. The first and by far the most relevant stage of adhesive joining technology is the preparation of adherend surfaces [5, 18, 40, 66–68].The process should exhibit high effectiveness in order to prevent partial bonding, which could have an adverse effect on joint strength. Adhesive bonding (also referred to as gluing or glue bonding) describes a wafer bonding technique with applying an intermediate layer to connect substrates of different types of materials. Those connections produced can be soluble or insoluble. The commercially available adhesive can be organic or inorganic and is deposited on one or both substrate surfaces.   Direct wafer bonding of silicon wafers is a promising technology for manufacturing three-dimensional complex microelectromechanical systems as well as silicon-on-insulator substrates. Previous work has reported that the bond quality declines with increasing surface roughness, however, this relationship has not been quantified. This article explicitly correlates the bond quality, which is.